Silicon Wafers Type P

These silicon wafers can be used for substrate studies or as substrate for AFM and SEM samples by cleaving the wafer.

Available Options:

Description

Spécifications

1 2 3 4 6
Material: Silicon Silicon Silicon Silicon Silicon
Diameter: 25 mm 50 mm 76 mm 100 mm 150 mm
Orientation: <100> <100> <111> <100> <100>
Resistance : 1-30 Ohms 1-30 Ohms 1-30 Ohms 1-30 Ohms 1-30 Ohms
Type P: Boron – 1 primary flat Boron – 1 primary flat Boron – 1 primary flat Boron – 1 primary flat Boron – 1 primary flat
SiO2 top coating: None None None None None
Wafer Thickness: 10-12 mill
(254-304µm)
9-13 mill
(230-330µm)
13.6-18.5 mill
(345-470µm)
18.7-22.6 mill
(475-575µm)
23.6-25.2 mill
(600-690µm)
Roughness: 2nm 2nm 2nm 2nm 2nm
TTV: <20µm  
Polished: on one side on one side on one side on one side on one side

 

Additional information

Unit

each, each

Reviews

There are no reviews yet.

Be the first to review “Silicon Wafers Type P”

Your email address will not be published. Required fields are marked *

0

Your Cart