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Description
Specifications
| 4″ | 6″ | 8″ | |
| Material: | Silicon | Silicon | Silicon |
| Diameter: | 100 mm | 150 mm | 200 mm |
| Orientation: | <100> | <100> | <100> |
| Type/Dopant: | P/Boron | P/Boron | P/Boron |
| Grade: | Prime/CZ Virgin | Prime/CZ Virgin | Prime/CZ Virgin |
| Growth Method: | CZ | CZ | CZ |
| Resistivity: | 10-20 Ohm-cm | 10-20 Ohm-cm | 10-20 Ohm-cm |
| Thickness: | 525µm ±20µm | 675µm ±20µm | 725µm ±20µm |
| TTV: | <4.00µm | <4.00µm | <4.00µm |
| SFPD: | <2.0µm | <2.0µm | <2.0µm |
| Warp: | ≤30µm | ≤30µm | ≤30µm |
| Bow: | ≤30µm | ≤30µm | ≤30µm |
| Particles: | ≤20@≥0.3µm | ≤20@≥0.3µm | ≤20@≥0.3µm |
| Front Surface: | Polished | Polished | Polished |
| Back Surface: | Etched | Etched | Etched |
| Flat: | 2 per SEMI Standard | 1 per SEMI Standard | 2 per SEMI Standard |
| Site Flatness: | <2.0µm | <2.0µm | <2.0µm |
| Roughness: | Typically 2-3Å | Typically 2-3Å | Typically 2-3Å |
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